transistor electronics

  • 释义

    晶体管电子学

数据更新时间:2026-05-25 15:35:40
1、

IGBT ( Insulated Gate Bipolar Transistor) is the main switch power device in the power electronics. Due to the fast switching speed and low dropout voltage, it is widely used in power electronic devices.

IGBT(绝缘栅控双极型晶体管)是电力电子技术中的主流开关功率器件,由于开通/关断速度快、通态压降小等优点,在电力电子装置中得到广泛的应用。

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2、

The auto Die Bonder for SOT-23 transistor is a high-speed , high-precision, machinery electronics integrated equipment.

SOT-23晶体管封装自动键合机是 高速 、 高精度机电一体化精密设备.

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3、

IGBT emerged in early 1980s as a new type of entire-control power electronics transistor. The Induction-heating Power Supply ( ISP) with power of hundreds kilowatt and frequency between 10~ 100 kHz is popularly used in induction-heating field.

IGBT是80年代初出现的新一代全控型电力半导体器件,在感应加热领域生产的功率达数百千瓦、频率10~100kHz的IGBT超音频电源,正得到广泛应用。

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4、

It is envisioned that the magnetism, electronics and informatics will ultimately lead to new spin-based multifunctional devices such as spin field effect transistor, spin light emitting diode, modulators and quantum bits for quantum computation and communication.

磁学、电子学和信息学的结合有望产生出自旋场效应晶体管、自旋发光二极管、调制器及用于量子计算、量子通信等装置的新型器件。

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